News: Microelectronics
21 February 2024
Dallas-based Texas Instruments (TI) has introduced two new power conversion device portfolios to help engineers achieve more power in smaller spaces, providing what is claimed to be the highest power density at a lower cost. TI’s new 100V integrated gallium nitride (GaN) power stages feature thermally enhanced dual-side-cooled package technology to simplify thermal designs and achieve the highest power density in mid-voltage applications at more than 1.5kW/in3. The firm’s new 1.5W isolated DC/DC modules with integrated transformers are claimed to be the industry’s smallest and most power-dense, helping engineers to shrink the isolated bias power-supply size in automotive and industrial systems by over 89%. Devices from both portfolios are on display in booth 1145 at the Applied Power Electronics Conference (APEC 2024) in Long Beach Convention & Entertainment Center, CA, USA (25–29 February).
“For power-supply designers, delivering more power in limited spaces will always be a critical design challenge,” says Kannan Soundarapandian, general manager of High Voltage Power at TI. “Take data centers, for example – if engineers can design power-dense server power-supply solutions, data centers can operate more efficiently to meet growing processing needs while also minimizing their environmental footprint.”
Increase power density and efficiency with 100V integrated GaN power stages
TI says that, with its new 100V GaN power stages LMG2100R044 and LMG3100R017, designers can reduce power-supply solution size for mid-voltage applications by more than 40% and achieve industry-leading power density of over 1.5kW/in3, enabled by GaN technology’s higher switching frequencies. The new portfolio also reduces switching power losses by 50% compared with silicon-based solutions, while achieving 98% or higher system efficiency, given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency enables the same panel to store and produce more power while decreasing the size of the overall micro-inverter system.
A key enabler of the thermal performance in the 100V GaN portfolio is TI’s thermally enhanced dual-side-cooled package. This technology enables more efficient heat removal from both sides of the device and offers improved thermal resistance compared with competing integrated GaN devices, it is reckoned.
Shrink bias power supplies by more than 89%
With over eight times higher power density than discrete solutions and three times higher power density than competing modules, TI’s new 1.5W isolated DC/DC modules deliver the highest output power and isolation capability (3kV) for automotive and industrial systems in a 4mm-by-5mm very thin small outline no-lead (VSON) package, it is claimed. With TI’s UCC33420-Q1 and UCC33420, designers can also meet stringent electromagnetic interference (EMI) requirements, such as Comité International Spécial des Perturbations Radioélectriques (CISPR) 32 and 25, with fewer components and a simple filter design.
The new modules use TI’s next-generation integrated transformer technology, which eliminates the need for an external transformer in a bias supply design. The technology allows engineers to shrink solution size by more than 89% and reduce height by up to 75%, while cutting the bill of materials by half compared with discrete solutions, it is reckoned.
With the first automotive-qualified solution in this small package, designers can now reduce the footprint, weight and height of their bias supply solution for electric vehicle systems such as battery management systems. For space-constrained industrial power delivery in data centers, the new module enables designers to minimize printed circuit board area.
Pushing the limits of power at APEC 2024
TI says that the new devices are the latest ways it is pushing power further and making innovation possible for engineers. At APEC 2024, TI is showcasing the latest automotive and industrial designs for 48V automotive power; the first USB Power Delivery Extended Power Range full charging solution on the market; an 800V, 300kW silicon carbide-based traction inverter; high-efficiency power for server motherboards; and more.
At 12 p.m (Pacific time) on 28 February, TI’s general manager of Industrial Power Design Services Robert Taylor is presenting an industry session ‘To Power Density and Beyond: Breaking Through Barriers to Achieve the Highest Power Density’, discussing innovations in packaging, integration and system-level techniques that are making greater power density possible.
Also, throughout APEC, TI power experts are leading 20 industry and technical sessions to address power-management design challenges.
Available for purchase now are production quantities of the LMG2100R044 and LMG3100R017 100V GaN power stages and pre-production quantities of the UCC33420 and UCC33420-Q1 1.5W isolated DC/DC modules. Other versions of these devices with lower input voltages, output voltages and power ratings are expected to be available in second-quarter 2024. Multiple payment and shipping options are available.
TI expands low-power GaN portfolio, allowing AC/DC power adapters to shrink 50%
TI launches first automotive GaN FET with integrated driver, protection and active power management
www.ti.com/power-management/gan/overview.html
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- Source: https://www.semiconductor-today.com/news_items/2024/feb/ti-210224.shtml
