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Tag: FETs

Transphorm quarterly product revenue falls by 11% due to short-term demand pushouts

News: Microelectronics 22 February 2024 For its fiscal third-quarter 2024 (to end-December 2023), Transphorm Inc of Goleta, near Santa Barbara, CA, USA...

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EPC Space launches first rad-hard GaN power stage IC

News: Microelectronics 14 February 2024 EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions...

Transphorm showcasing GaN power conversion range at APEC

News: Microelectronics 8 February 2024 Transphorm Inc of Goleta, near Santa Barbara, CA, USA says that it is showcasing its broad...

Qorvo launches automotive-qualified 9m 750V SiC FET in D2PAK-7L package

News: Microelectronics 5 February 2024 Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and...

A Potentially CMOS Compatible Integration Of Reconfigurable FETs Based On Al-Si-Al Heterostructure Sheets

A technical paper titled “Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic” was published by researchers at TU Vienna...

EYE on NPI – STMicroelectronics’ AEK-POW-BMS63EN Battery Management System Module #EYEon NPI #digikey #adafruit @DigiKey @ST_world @adafruit

This week’s EYE ON NPI (video) is a part of a balanced breakfast, wait no we mean a balanced battery pack! It’s STMicroelectronics’ AEK-POW-BMS63EN...

Renesas to acquire GaN device maker Transphorm for $339m

News: Microelectronics 11 January 2024 Transphorm Inc of Goleta, CA, USA is to be acquired by a subsidiary of Renesas Electronics Corp...

Status of the IP competition for vertical GaN power devices

News: Microelectronics 11 December 2023 Gallium nitride (GaN) power devices have been successfully adopted in several power applications, starting with lateral GaN...

Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University. Abstract: “Horizontal gate-all-around...

EPC launches 100V eGaN FET-based 3-phase BLDC motor drive inverter reference design

News: Microelectronics 3 November 2023 Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN)...

Startup Funding: September 2023

Chip-to-chip and data center I/O drew investor interest in September, including support for several startups developing Compute Express Link (CXL) solutions. Elsewhere in the...

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer – Nature Nanotechnology

Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).Article  CAS  Google Scholar  Jung, S.-G., Kim, J.-K. &...

High-NA Lithography Starting To Take Shape

The future of semiconductor technology is often viewed through the lenses of photolithography equipment, which continues to offer better resolution for future process nodes...

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