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Tag: 2D semiconductors

NTT Research PHI Lab Scientists Achieve Quantum Control of Excitons in 2D Semiconductors  – High-Performance Computing News Analysis | insideHPC

Sunnyvale, Calif. – March 26, 2024 – NTT Research, Inc., a division of NTT (TYO:9432), today announced that scientists from its Physics & Informatics (PHI) Lab have achieved quantum...

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Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics – Nature Nanotechnology

Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).Article  CAS  ...

This Week’s Awesome Tech Stories From Around the Web (Through October 14)

Scientists Just Drafted an Incredibly Detailed Map of the Human BrainCassandra Willyard | MIT Technology Review“Some brain atlases already exist, but this new suite...

Research Bits: September 11

Combining digital and analog Researchers from École Polytechnique Fédérale de Lausanne (EPFL) propose integrating 2D semiconductors with ferroelectric materials for joint digital and analog information...

Mirror, mirror, who is the most efficient semiconductor of them all?

Aug 09, 2023 (Nanowerk News) The next generation of 2D semiconductor materials doesn’t like what it sees when it looks in the mirror. Current...

Excitons in mesoscopically reconstructed moiré heterostructures

Vertical assemblies of twisted or lattice-mismatched heterobilayers of two-dimensionaltransition metal dichalcogenides (TMDs) with moiré-modulated interlayer coupling give rise to correlated Hubbard-model physics1—exhibiting signatures of...

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

Hutson, M. Has artificial intelligence become alchemy? Science 360, 478–478 (2018).Article  CAS  Google Scholar  Christensen, D. V. et al. 2022 roadmap on neuromorphic...

Looking Forward To SPIE, And Beyond

On the eve of this year’s SPIE Advanced Lithography + Patterning conference, I took a look at the IEEE Devices and Systems Roadmap’s...

Epitaxial substitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides

Badaroglu, M. et al. More Moore. In 2021 IEEE International Roadmap for Devices and Systems Outbriefs 1–38 (IEEE, 2020).Liu, Y. et al. Promises and...

Evidence of frustrated magnetic interactions in a Wigner–Mott insulator

Wu, F., Lovorn, T., Tutuc, E. & MacDonald, A. H. Hubbard model physics in transition metal dichalcogenide moiré bands. Phys. Rev. Lett. 121, 026402...

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)

A new research paper titled “Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping” was published by researchers at NIST,...

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