Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).
Ding, W. et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat. Commun. 8, 14956 (2017).
Zhou, Y. et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett. 17, 5508–5513 (2017).
Li, Q. et al. Optoelectronic and ionic effects on transport in van der Waals metal selenophosphate AgBiP2Se6. Phys. Rev. Appl. 19, 054055 (2023).
Shang, J. et al. Stacking-dependent interlayer ferroelectric coupling and moiré domains in a twisted AgBiP2Se6 bilayer. J. Phys. Chem. Lett. 13, 2027–2032 (2022).
Liao, J. et al. Van der Waals ferroelectric semiconductor field effect transistor for in-memory computing. ACS Nano 17, 6095–6102 (2023).
Sui, F. et al. Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor. Nat. Commun. 14, 36 (2023).
Wu, M. & Zeng, X. C. Bismuth oxychalcogenides: a new class of ferroelectric/ferroelastic materials with ultra high mobility. Nano Lett. 17, 6309–6314 (2017).
Tan, C. et al. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide. Nature 616, 66–72 (2023).
Wang, W. et al. Electrically switchable polarization in Bi2O2Se ferroelectric semiconductors. Adv. Mater. 35, 2210854 (2023).
Wang, S. et al. Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing. Nat. Commun. 12, 53 (2021).
Xue, F. et al. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Adv. Mater. 33, 2008709 (2021).
Yang, H. et al. Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In2Se3 and WSe2. Sci. China Inf. Sci. 62, 220404 (2019).
Si, M. et al. A novel scalable energy-efficient synaptic device: crossbar ferroelectric semiconductor junction. In IEEE International Electron Devices Meeting (IEDM), 6.6.1–6.6.4 (2019).
Si, M. et al. A ferroelectric semiconductor field-effect transistor. Nat. Electron. 2, 580–586 (2019).
Wang, J. et al. Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor. Sci. Bull. 66, 2288–2296 (2021).
Wang, L. et al. Exploring ferroelectric switching in α-In2Se3 for neuromorphic computing. Adv. Funct. Mater. 30, 2004609 (2020).
Liu, K. et al. An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing. Nat. Electron. 5, 761–773 (2022).
Wang, S., Liu, X. & Zhou, P. The road for 2D semiconductors in the silicon age. Adv. Mater. 34, 2106886 (2022).
Sun, Y., Wang, S., Chen, X., Zhang, Z. & Zhou, P. Multioperation mode ferroelectric channel devices for memory and computation. Adv. Intell. Syst. 4, 2100198 (2022).
Rodriguez, J. R. et al. Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3. Appl. Phys. Lett. https://doi.org/10.1063/5.0014945 (2020).
He, J., Stephenson, G. & Nakhmanson, S. Electronic surface compensation of polarization in PbTiO3 films. J. Appl. Phys. 112, 054112 (2012).
Fredrickson, K. D. & Demkov, A. A. Switchable conductivity at the ferroelectric interface: nonpolar oxides. Phys. Rev. B 91, 115126 (2015).
Quindeau, A. et al. Origin of tunnel electroresistance effect in PbTiO3-based multiferroic tunnel junctions. Phys. Rev. B 92, 035130 (2015).
Radaelli, G. et al. Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers. Adv. Mater. 27, 2602–2607 (2015).
Liu, X., Tsymbal, E. Y. & Rabe, K. M. Polarization-controlled modulation doping of a ferroelectric from first principles. Phys. Rev. B 97, 094107 (2018).
Kim, J. et al. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus. Science 349, 723–726 (2015).
Lu, X. & Yang, L. Stark effect of doped two-dimensional transition metal dichalcogenides. Appl. Phys. Lett. 111, 193104 (2017).
Li, C. et al. Band structure, ferroelectric instability, and spin–orbital coupling effect of bilayer α-In2Se3. J. Appl. Phys. 128, 234106 (2020).
Kim, W. Y. et al. Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations. Nat. Commun. 7, 10429 (2016).
Shuai, W.-J., Wang, R. & Zhao, J.-Z. Ferroelectric phase transition driven by anharmonic lattice mode coupling in two-dimensional monolayer In2Se3. Phys. Rev. B 107, 155427 (2023).
Wu, J. et al. High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation. Nat. Electron. 3, 466–472 (2020).
Su, Y. et al. Van der Waals multiferroic tunnel junctions. Nano Lett. 21, 175–181 (2021).
Ding, J., Shao, D.-F., Li, M., Wen, L.-W. & Tsymbal, E. Y. Two-dimensional antiferroelectric tunnel junction. Phys. Rev. Lett. 126, 057601 (2021).
Lv, B. et al. Layer-dependent ferroelectricity in 2H-stacked few-layer α-In2Se3. Mater. Horiz. 8, 1472–1480 (2021).
Wan, S. et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale 10, 14885–14892 (2018).
Smidstrup, S. et al. QuantumATK: an integrated platform of electronic and atomic-scale modelling tools. J. Phys. Condens. Matter 32, 015901 (2020).
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).
Kleinman, L. & Bylander, D. M. Efficacious form for model pseudopotentials. Phys. Rev. Lett. 48, 1425–1428 (1982).
Monkhorst, H. J. & Pack, J. D. Special point for Brillouin-zone integrations. Phys. Lett. B 13, 5188–5192 (1976).
Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207–8215 (2003).
Ferreira, L. G., Marques, M. & Teles, L. K. Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors. AIP Adv. 1, 032119 (2011).
Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H–Pu. J. Chem. Phys. 132, 154104 (2010).
Grimme, S., Ehrlich, S. & Goerigk, L. Effect of the damping function in dispersion corrected density functional theory. J. Comput. Chem. 32, 1456–1465 (2011).
Datta, S. (ed.) Cambridge Studies in Semiconductor Physics and Microelectronic Engineering (Cambridge Univ. Press, 1995).
Laturia, A., Van de Put, M. L. & Vandenberghe, W. G. Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk. NPK 2D Mater. Appl. 2, 6 (2018).
Wang, L., Pu, Y., Soh, A. K., Shi, Y. & Liu, S. Layers dependent dielectric properties of two dimensional hexagonal boron nitride nanosheets. AIP Adv. 6, 125126 (2016).
- SEO Powered Content & PR Distribution. Get Amplified Today.
- PlatoData.Network Vertical Generative Ai. Empower Yourself. Access Here.
- PlatoAiStream. Web3 Intelligence. Knowledge Amplified. Access Here.
- PlatoESG. Carbon, CleanTech, Energy, Environment, Solar, Waste Management. Access Here.
- PlatoHealth. Biotech and Clinical Trials Intelligence. Access Here.
- Source: https://www.nature.com/articles/s41565-023-01539-4
