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Tag: in-memory computing

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New mechanical transistors enable environmentally adaptive and electricity-free computing

Mar 26, 2024 (Nanowerk Spotlight) In the field of computing, the electronic transistor has long been the dominant technology. Since its invention in 1947, this...

In-Memory Databases: An Overview – DATAVERSITY

In-memory databases work faster than databases with disk storage. This is because they use “internal” optimization algorithms, which are simpler and faster, and this...

A Precision-Optimized Fixed-Point Near-Memory Digital Processing Unit for Analog IMC (IBM and ETH Zurich)

A technical paper titled “A Precision-Optimized Fixed-Point Near-Memory Digital Processing Unit for Analog In-Memory Computing” was published by researchers at IBM Research Europe and...

Startup Funding: January 2024

Big rounds marked January, with three companies raising over $100 million. Quantum computing topped the list, with the company that resulted from the merger...

Chip Industry Technical Paper Roundup: Jan. 23

Industry Research ...

Ferroelectric Tunnel Junctions In Crossbar Array Analog In-Memory Compute Accelerators

A technical paper titled “Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators” was published by researchers at Lund University. Abstract: “Neuromorphic computing has seen great interest...

Startup Funding: December 2023

Photonics and optics were strong in December, with investors funding two different companies using photonic technologies to develop AI chips and interconnects. Another key...

Novel memristor design clears critical impediments for future AI chips

Jan 04, 2024 (Nanowerk Spotlight) Researchers are pursuing memristors – resistive memory devices with properties similar to neurons – as a means to develop energy-efficient...

Large-Scale Integration Of 2D Materials As The Semiconducting Channel In An In-Memory Processor (EPFL)

A technical paper titled “A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories” was published by researchers at École Polytechnique Fédérale...

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics – Nature Nanotechnology

Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).Article  CAS  ...

Stacked Ferroelectric Memory Array Comprised Of Laterally Gated Ferroelectric Field-Effect Transistors

A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3  for stacked in-memory computing array” was published by researchers at Samsung Electronics...

Startup Funding: September 2023

Chip-to-chip and data center I/O drew investor interest in September, including support for several startups developing Compute Express Link (CXL) solutions. Elsewhere in the...

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