The primary hurdle in commercializing these materials is the difficulty in producing their large wafer-scale forms, which may not necessarily be single crystalline. Researchers have the flexibility to choose a fabrication process for TMDs, whether single-crystalline or polycrystalline, based on the needs of the application and cost factors. Significant advancements have been achieved recently using chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD) techniques. For instance, 12-inch polycrystalline monolayer MoS₂ by CVD (Y. Xia et al., Nat. Mater. 22, 1324–1331; 2023) and low-temperature growth of 8-inch monolayer MoS₂ by MOCVD for back-end of line (BEOL) integration (J. Zhu et al., Nat. Nanotechnol. 18, 456–463; 2023) have been realized in 2023. When asked about the most promising technique, Wang feels that both techniques hold industrial potential. The CVD method currently has higher materials quality, but MOCVD catches up quickly and has advantages in wafer-scale uniformity and repeatability. “We recently developed a halide vapor phase epitaxy method for TMD epitaxy, which is widely used in the III–V semiconductors industry and may bring a universal way to realize wafer-scale epitaxy of single-crystal TMDs,” says Wang (T. Li et al., Natl Sci. Open 2, 20220055; 2023).

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• Source: https://www.nature.com/articles/s41565-024-01610-8