Tag: MOCVD

Aixtron’s Q4 revenue grows to record €214.2m, aiding full-year growth of 36%

Semiconductor March 8, 2024

News: Suppliers 8 March 2024 For fourth-quarter 2023, deposition equipment maker Aixtron SE...

Challenges remain for 2D semiconductor growth – Nature Nanotechnology

Nano Technology February 7, 2024

Large second-order susceptibility from a quantized indium tin oxide monolayer – Nature Nanotechnology

Nano Technology January 2, 2024

Aixtron’s Q3 revenue and earnings up significantly year-on-year

Semiconductor November 15, 2023

ELEMENT 3–5’s novel ACCELERATOR 350K provides single-crystal AlN for mass production

SemiconductorNovember 1, 2023

News: Suppliers 1 November 2023 ELEMENT 3–5 GmbH says that its innovative Next Level Epitaxy (NLE) technology enables the reduction of the total manufacturing...

Riber’s MBE 49 GaN aims to compete with MOCVD for 200mm GaN-on-Si

SemiconductorOctober 17, 2023

News: Suppliers 17 October 2023 Riber S.A. of Bezons, France – which makes molecular beam epitaxy (MBE) systems as well as evaporation sources –...

Indian Institute of Science develops fully indigenous GaN power switch

SemiconductorSeptember 28, 2023

News: Microelectronics 28 September 2023 The Indian Institute of Science (IISc) in Bengaluru has developed what it describes as a fully indigenous gallium nitride...

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer – Nature Nanotechnology

Nano TechnologySeptember 4, 2023

Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).Article CAS Google Scholar Jung, S.-G., Kim, J.-K. &...