Onsager, L. Reciprocal relations in irreversible processes. II. Phys. Rev. 38, 2265–2279 (1931).
Bridgman, P. W. The connections between the four transverse galvanomagnetic and thermomagnetic phenomena. Phys. Rev. 24, 644–651 (1924).
Li, P. et al. Colossal Nernst power factor in topological semimetal NbSb2. Nat. Commun. 13, 7612 (2022).
Chen, Z. et al. Leveraging bipolar effect to enhance transverse thermoelectricity in semimetal Mg2Pb for cryogenic heat pumping. Nat. Commun. 12, 3837 (2021).
Pan, Y. et al. Ultrahigh transverse thermoelectric power factor in flexible Weyl semimetal WTe2. Nat. Commun. 13, 3909 (2022).
Sharma, G. Tunable topological Nernst effect in two-dimensional transition-metal dichalcogenides. Phys. Rev. B 98, 075416 (2018).
Waissman, J. et al. Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry. Nat. Nanotechnol. 17, 166–173 (2022).
Sakai, A. et al. Iron-based binary ferromagnets for transverse thermoelectric conversion. Nature 581, 53–57 (2020).
Zhou, W. et al. Seebeck-driven transverse thermoelectric generation. Nat. Mater. 20, 463–467 (2021).
Asaba, T. et al. Colossal anomalous Nernst effect in a correlated noncentrosymmetric kagome ferromagnet. Sci. Adv. 7, eabf1467 (2021).
Bel, R. et al. Giant Nernst effect in CeCoIn5. Phys. Rev. Lett. 92, 217002 (2004).
Zhu, Z., Yang, H., Fauqué, B., Kopelevich, Y. & Behnia, K. Nernst effect and dimensionality in the quantum limit. Nat. Phys. 6, 26–29 (2010).
Xu, Z. A., Ong, N. P., Wang, Y., Kakeshita, T. & Uchida, S. Vortex-like excitations and the onset of superconducting phase fluctuation in underdoped La2–xSrxCuO4. Nature 406, 486–488 (2000).
Behnia, K., Balicas, L. & Kopelevich, Y. Signatures of electron fractionalization in ultraquantum bismuth. Science 317, 1729–1731 (2007).
Du, J., Shen, W., Su, S. & Chen, J. Quantum thermal management devices based on strong coupling qubits. Phys. Rev. E 99, 062123 (2019).
Feng, W. et al. Thermal management of a 3D packaging structure for superconducting quantum annealing machines. Appl. Phys. Lett. 118, 174004 (2021).
Elouard, C., Thomas, G., Maillet, O., Pekola, J. P. & Jordan, A. N. Quantifying the quantum heat contribution from a driven superconducting circuit. Phys. Rev. E 102, 030102 (2020).
Behnia, K. & Aubin, H. Nernst effect in metals and superconductors: a review of concepts and experiments. Rep. Prog. Phys. 79, 046502 (2016).
Cao, H. et al. Photo-Nernst current in graphene. Nat. Phys. 12, 236–239 (2016).
Kinoshita, K. et al. Photo-Nernst detection of cyclotron resonance in partially irradiated graphene. Appl. Phys. Lett. 115, 153102 (2019).
Jiang, J., Xu, L., Qiu, C. & Peng, L.-M. Ballistic two-dimensional InSe transistors. Nature 616, 470–475 (2023).
Cao, T., Li, Z. & Louie, S. G. Tunable magnetism and half-metallicity in hole-doped monolayer GaSe. Phys. Rev. Lett. 114, 236602 (2015).
Zultak, J. et al. Ultra-thin van der Waals crystals as semiconductor quantum wells. Nat. Commun. 11, 125 (2020).
Zeng, J. et al. Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials. Nano Lett. 18, 7538–7545 (2018).
Hung, N. T., Nugraha, A. R. T. & Saito, R. Two-dimensional InSe as a potential thermoelectric material. Appl. Phys. Lett. 111, 092107 (2017).
Nissimagoudar, A. S., Ma, J., Chen, Y. & Li, W. Thermal transport in monolayer InSe. J. Phys. Condens. Matter 29, 335702 (2017).
Shcherbakov, D. et al. Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor. Sci. Adv. 7, eabe2892 (2021).
Bandurin, D. A. et al. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat. Nanotechnol. 12, 223–227 (2017).
Pasquale, G. et al. Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor. Nano Lett. 22, 8883–8891 (2022).
Pasquale, G. et al. Electrical detection of the flat-band dispersion in van der Waals field-effect structures. Nat. Nanotechnol. 18, 1416–1422 (2023).
Zomer, P. J., Guimarães, M. H. D., Brant, J. C., Tombros, N. & van Wees, B. J. Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. Appl. Phys. Lett. 105, 013101 (2014).
Purdie, D. G. et al. Cleaning interfaces in layered materials heterostructures. Nat. Commun. 9, 5387 (2018).
Dankert, A. & Dash, S. P. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nat. Commun. 8, 16093 (2017).
Song, J. C. W. & Levitov, L. S. Shockley-Ramo theorem and long-range photocurrent response in gapless materials. Phys. Rev. B 90, 075415 (2014).
Cheng, Z. et al. How to report and benchmark emerging field-effect transistors. Nat. Electron. 5, 416–423 (2022).
Migliato Marega, G. et al. A large-scale integrated vector–matrix multiplication processor based on monolayer molybdenum disulfide memories. Nat. Electron. 6, 991–998 (2023).
Mott, N. F. The basis of the electron theory of metals, with special reference to the transition metals. Proc. Phys. Soc. A 62, 416 (1949).
Chen, V. et al. Ambipolar thickness-dependent thermoelectric measurements of WSe2. Nano Lett. 23, 4095–4100 (2023).
Buscema, M. et al. Large and tunable photothermoelectric effect in single-layer MoS2. Nano Lett. 13, 358–363 (2013).
Buscema, M. et al. Photocurrent generation with two-dimensional van der Waals semiconductors. Chem. Soc. Rev. 44, 3691–3718 (2015).
Wei, P., Bao, W., Pu, Y., Lau, C. N. & Shi, J. Anomalous thermoelectric transport of Dirac particles in graphene. Phys. Rev. Lett. 102, 166808 (2009).
Yim, W. M. & Amith, A. BiSb alloys for magneto-thermoelectric and thermomagnetic cooling. Solid-State Electron. 15, 1141–1165 (1972).
Rai, A., Sangwan, V. K., Gish, J. T., Hersam, M. C. & Cahill, D. G. Anisotropic thermal conductivity of layered indium selenide. Appl. Phys. Lett. 118, 073101 (2021).
Wickramaratne, D., Zahid, F. & Lake, R. K. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands. J. Appl. Phys. 118, 075101 (2015).
Song, S. et al. Wafer-scale growth of two-dimensional, phase-pure InSe. Matter 6, 3483–3498 (2023).
Peres, N. M. R. Colloquium: the transport properties of graphene: an introduction. Rev. Mod. Phys. 82, 2673–2700 (2010).
Tan, J. et al. Thermoelectric properties of bismuth telluride thin films deposited by radio frequency magnetron sputtering. In Smart Sensors, Actuators, and MEMS II Vol. 5836, 711–718 (SPIE, 2005).
Collaudin, B. & Rando, N. Cryogenics in space: a review of the missions and of the technologies. Cryogenics 40, 797–819 (2000).
Hornibrook, J. M. et al. Cryogenic control architecture for large-scale quantum computing. Phys. Rev. Appl. 3, 024010 (2015).
Gröblacher, S. et al. Demonstration of an ultracold micro-optomechanical oscillator in a cryogenic cavity. Nat. Phys. 5, 485–488 (2009).
Ho, P.-H. et al. High-mobility InSe transistors: the role of surface oxides. ACS Nano 11, 7362–7370 (2017).
Hu, S. et al. Reconfigurable InSe electronics with van der Waals integration. Adv. Electron. Mater. 8, 2101176 (2022).
Jiang, J. et al. Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing. npj 2D Mater. Appl. 3, 29 (2019).
Yang, Z. et al. Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photoresponse. ACS Nano 11, 4225–4236 (2017).
Bergeron, H. et al. Large-area optoelectronic-grade InSe thin films via controlled phase evolution. Appl. Phys. Rev. 7, 041402 (2020).
Hu, Y. et al. Temperature-dependent growth of few layer β-InSe and α-In2Se3 single crystals for optoelectronic device. Semicond. Sci. Technol. 33, 125002 (2018).
Chang, H.-C. et al. Synthesis of large-area InSe monolayers by chemical vapor deposition. Small 14, 1802351 (2018).
Arora, H. et al. Effective hexagonal boron nitride passivation of few-layered InSe and GaSe to enhance their electronic and optical properties. ACS Appl. Mater. Interfaces 11, 43480–43487 (2019).
Wang, Y. et al. Schottky-barrier thin-film transistors based on HfO2-capped InSe. Appl. Phys. Lett. 115, 033502 (2019).
Checkelsky, J. G. & Ong, N. P. Thermopower and Nernst effect in graphene in a magnetic field. Phys. Rev. B 80, 081413 (2009).
Yang, H. et al. Phase diagram of bismuth in the extreme quantum limit. Nat. Commun. 1, 47 (2010).
Tu, S. et al. Record thermopower found in an IrMn-based spintronic stack. Nat. Commun. 11, 2023 (2020).
Yang, Y. et al. Anomalous enhancement of the Nernst effect at the crossover between a Fermi liquid and a strange metal. Nat. Phys. 19, 379–385 (2023).
Ochs, A. M. et al. Synergizing a large ordinary Nernst effect and axis-dependent conduction polarity in flat band KMgBi crystals. Adv. Mater. 36, 2308151 (2024).
- SEO Powered Content & PR Distribution. Get Amplified Today.
- PlatoData.Network Vertical Generative Ai. Empower Yourself. Access Here.
- PlatoAiStream. Web3 Intelligence. Knowledge Amplified. Access Here.
- PlatoESG. Carbon, CleanTech, Energy, Environment, Solar, Waste Management. Access Here.
- PlatoHealth. Biotech and Clinical Trials Intelligence. Access Here.
- Source: https://www.nature.com/articles/s41565-024-01717-y
