Liu, C. et al. 2D materials-based static random-access memory. Adv. Mater. 34, 2107894 (2022).Article CAS Google Scholar Wan, Y. et al. Wafer-scale single-orientation...
A new research paper titled “Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping” was published by researchers at NIST,...