A technical paper titled “Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions” was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden,...
A technical paper titled “Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic” was published by researchers at TU Vienna...
A technical paper titled “A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories” was published by researchers at École Polytechnique Fédérale...
Dec 15, 2023
(Nanowerk News) Research appearing in ACS Nano ("Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene"), reveals the ballistic movement of electrons...
A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array” was published by researchers at Samsung Electronics...
News: Microelectronics 3 November 2023 Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN)...
The outbreak of the COVID pandemic in 2020 has once again shown how important reliable and rapid detection methods are to initiate effective measures...
