News: Microelectronics 11 January 2023 Japan’s ROHM has announced the adoption of its new fourth-generation silicon carbide (SiC) MOSFETs and gate driver ICs in...

News: Microelectronics 1 December 2022 In a signing ceremony at its headquarters in Kyoto, Japan-based power semiconductor device maker ROHM Co Ltd has entered...

News: Microelectronics 22 November 2022 Japan’s ROHM has signed a joint development agreement with Mazda MotorCorp and Imasen Electric Industrial Co Ltd for inverters...

Device makers across the globe are ramping silicon carbide (SiC) manufacturing, with growth set to really take off starting in 2024. It’s been almost five...

Power semiconductor maker ROHM says that its new GNE10xxTB series of 150V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) increases the gate withstand voltage (rated gate-source voltage) to what is claimed to be an industry-leading 8V – ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with Internet of Things (IoT) communication devices...

Japan-based ROHM Semiconductor says that California-based luxury electric vehicle (EV) company Lucid is using its silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) in its first car, the Lucid Air, for which customer deliveries are now underway...

Some 300mm tools are converted to 200mm; equipment prices and chip manufacturing costs are rising.

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