ROHM Starts Production Of 150V GaN HEMTs With 8V Gate-source Voltage
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ROHM starts production of 150V GaN HEMTs with 8V gate-source voltage

Power semiconductor maker ROHM says that its new GNE10xxTB series of 150V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) increases the gate withstand voltage (rated gate-source voltage) to what is claimed to be an industry-leading 8V – ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with Internet of Things (IoT) communication devices…

Power semiconductor maker ROHM says that its new GNE10xxTB series of 150V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) increases the gate withstand voltage (rated gate-source voltage) to what is claimed to be an industry-leading 8V – ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with Internet of Things (IoT) communication devices…

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