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Tag: MOSFET

Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes – Nature Nanotechnology

Nano Technology
Chen, T.-A. et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219–223 (2020).Article  CAS  ...

Top News

SemiQ launches 1700V SiC Schottky discretes and dual diode modules

Semiconductor
News: Microelectronics 13 June 2024 SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC)...

Microchip Makes it Easier to Design an On-Board Charger Solution – CleanTechnica

Cleantech
Sign up for daily news updates from CleanTechnica on email. Or follow us on Google News! Designers can speed time to market for their on-board...

Nexperia’s 650V SiC Schottky diodes now automotive-qualified and available in R2P DPAK packaging

Semiconductor
News: Microelectronics 11 June 2024 Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, The Netherlands (a subsidiary of Wingtech Technology...

onsemi unveils complete power solution to improve energy efficiency for data centers

Semiconductor
News: Microelectronics 6 June 2024 onsemi of Scottsdale, AZ, USA claims that the combination of its latest-generation T10 PowerTrench family and EliteSiC...

Checking and Fixing Antenna Effects in IC Layouts – Semiwiki

Semiconductor
IC layouts go through extensive design rule checking to ensure correctness, before being accepted for fabrication at a foundry or IDM. There’s something called...

Infineon launches CoolSiC MOSFET Generation 2

Semiconductor
News: Microelectronics 5 March 2024 Infineon Technologies AG of Munich, Germany has introduced its next generation of silicon carbide (SiC) MOSFET trench...

Infineon launches 750V G1 CoolSiC MOSFET product family

Semiconductor
News: Microelectronics 28 February 2024 Infineon Technologies AG of Munich, Germany has launched the 750V G1 discrete CoolSiC MOSFET to meet...

SemiQ adds full-bridge configuration to QSiC 1200V SiC MOSFET module

Semiconductor
News: Microelectronics 19 February 2024 SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power...

EPC GaN FETs deliver power density and efficiency for computing, industrial and consumer DC/DC converters

Semiconductor
News: Microelectronics 14 February 2024 Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride...

Transphorm showcasing GaN power conversion range at APEC

Semiconductor
News: Microelectronics 8 February 2024 Transphorm Inc of Goleta, near Santa Barbara, CA, USA says that it is showcasing its broad...

Using OCD To Measure Trench Structures In SiC Power Devices

Semiconductor
You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition,...

Qorvo launches automotive-qualified 9m 750V SiC FET in D2PAK-7L package

Semiconductor
News: Microelectronics 5 February 2024 Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and...
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