News: Microelectronics
5 March 2024
Infineon Technologies AG of Munich, Germany has introduced its next generation of silicon carbide (SiC) MOSFET trench technology. The new CoolSiC MOSFET 650V and 1200V Generation 2 is said to improve MOSFET key performance figures such as stored energies and charges by up to 20% compared with the prior generation without compromising quality and reliability levels, leading to higher overall energy efficiency.
Picture: Infineon’s CoolSiC MOSFET 650V and 1200V G2 devices.
CoolSiC MOSFET Generation 2 (G2) technology continues to leverage the performance capabilities of silicon carbide by enabling lower energy loss, yielding higher efficiency during power conversion and benefitting power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies.
A DC fast-charging station for electric vehicles that is equipped with CoolSiC G2 allows up to 10% less power loss compared with previous generations, while enabling higher charging capacity without compromising form factors. Traction inverters based on CoolSiC G2 devices can further increase EV ranges. In renewable energies, solar inverters designed with CoolSiC G2 make smaller sizes possible while maintaining a high power output, resulting in a lower cost per watt.
“Megatrends call for new and efficient ways to generate, transmit and consume energy. With the CoolSiC MOSFET G2, Infineon brings silicon carbide performance to a new level,” says Dr Peter Wawer, division president Green Industrial Power at Infineon. “This new generation of SiC technology enables the accelerated design of more cost-optimized, compact, reliable and highly efficient systems harvesting energy savings and reducing CO2 for every watt installed in the field.”
Infineon says that its CoolSiC MOSFET trench technology provides an optimized design trade-off, allowing higher efficiency and reliability compared with SiC MOSFET technology available so far. Combined with the .XT packaging technology, the firm is further increasing the potential of designs based on CoolSiC G2 with higher thermal conductivity, better assembly control and improved performance.
Infineon launches 750V G1 CoolSiC MOSFET product family
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- Source: https://www.semiconductor-today.com/news_items/2024/mar/infineon-050324.shtml
