News: Microelectronics
15 December 2023
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-frequency, high-temperature and high-efficiency power semiconductor devices — has expanded its QSiC power module portfolio with the introduction of a new series of 5mΩ, 10mΩ and 20mΩ 1200V silicon carbide power MOSFETs in industry-standard half-bridge packages.
Engineered and tested to operate reliably in demanding environments, the new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the new QSiC modules support high-temperature operation (Tj=175°C) with low Rds(On) shift over the full temperature range. In addition, the modules exhibit what is claimed to be industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time.
With a solid foundation of high-performance ceramics, the new SiC modules are suitable for electric vehicle (EV) charging, on-board chargers (OBCs), DC–DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data-center power supplies, UPS/PFC circuits, Vienna rectifiers, and other automotive and industrial applications.
To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ’s modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow the required automotive- and industrial-grade quality levels to be achieved. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V.
“SemiQ’s commitment to reliability and testing sets us apart in the semiconductor industry,” reckons president Dr Timothy Han. “Our high-performance QSiC 1200V MOSFET modules are proven to withstand challenging conditions, enabling engineers to develop reliable systems for the renewable, automotive, medical and industrial sectors.”
SemiQ launches 1200V 40mΩ SiC MOSFET
- SEO Powered Content & PR Distribution. Get Amplified Today.
- PlatoData.Network Vertical Generative Ai. Empower Yourself. Access Here.
- PlatoAiStream. Web3 Intelligence. Knowledge Amplified. Access Here.
- PlatoESG. Carbon, CleanTech, Energy, Environment, Solar, Waste Management. Access Here.
- PlatoHealth. Biotech and Clinical Trials Intelligence. Access Here.
- Source: https://www.semiconductor-today.com/news_items/2023/dec/semiq-151223.shtml
