MOSFET gate resistance is a very important parameter, determining many characteristics of MOSFETs and CMOS circuits, such as:
• Switching speed• RC delay• Fmax –...
Achieving improvements in performance in advanced SoCs and packages — those used in mobile applications, data centers, and AI — will require complex and...
TSMC presented two papers on 3nm at the 2022 IEDM; “Critical Process features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and...
Ann Kelleher is Intel’s Executive Vice President, General Manager, Technology Development, and she gave the first plenary talk to kick off the 2022 IEDM,...
Near-threshold computing has long been used for power-sensitive devices, but some surprising, unrelated advances are making it much easier to deploy.
While near-threshold logic has...
