SemiQ Launches 1700V SiC Schottky Discretes And Dual Diode Modules

13 June 2024

SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has added 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC product line.

The new devices meet the size and power demands of a wide range of demanding applications including switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), induction heaters, welding equipment, DC/DC converters, solar inverters and electric vehicle (EV) charging stations.

Featuring zero reverse recovery current and near-zero switching loss, SemiQ’s 1700V SiC Schottky diode technologies are said to offer enhanced thermal management that reduces the need for cooling. As a result, engineers can implement highly efficient, high-performance designs that minimize system heat dissipation, allow the use of smaller heat-sinks, and lead to cost and space savings. All of the new products support fast switching across operating junction temperatures (Tj) of –55°C to +175°C.

The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode is rated for respective maximum forward currents of 110A and 151A. Device design supports easy parallel configurations, enhancing flexibility and scalability for various power applications.

The GHXS050B170S-D3 and GHXS100B170S-D3 dual diode packs are rugged modules supplied in a SOT-227 package. Maximum respective forward currents are 110A and 214A and each combine what is said to be outstanding performance at high frequencies with low-loss and low-EMI operation, ensuring energy efficiency and reliability by minimizing interference. Key features include low stray inductance, high junction temperature operation, rugged and easy mounting, and an internally isolated package (AlN), which provides optimal insulation and thermal conductivity. Low junction-to-case thermal resistance enables efficient heat dissipation, ensuring stability under high-power conditions. The modules can be easily connected in parallel due to the positive temperature coefficient (Tc) of the forward voltage (Vf).

“Our new 1700V SiC diodes represent a leap forward in power efficiency and reliability,” claims president Dr Timothy Han. “With their compact and flexible design, low-loss operation and superior thermal management, our QSiC diodes will enable our customers to create innovative, high-performance solutions while reducing costs and improving overall system efficiency.”

All parts have been tested at voltages exceeding 1870V and have undergone avalanche testing up to 1250mJ.

See related items:

SemiQ unveiling 1200V half-bridge modules in S3 package at PCIM

Tags: SiC power MOSFET

Visit: www.SemiQ.com