News: Microelectronics
14 June 2024
On 1 July, Tokyo-based Mitsubishi Electric Corp will begin sampling 8W and 14W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers, shipped as customer-board-friendly bare chips, suitable for use in emergency communications and Ka-band multi-carrier satellite-communication (SATCOM) earth stations.
While the mainstream frequency for satellite communications is currently the Ku-band (13-14GHz), the higher-frequency Ka-band (27.5–31GHz) offers multi-beam technology and much wider bandwidth for transmitting more data. The two new GaN MMIC power amplifiers will support the power levels and frequencies required for Ka-band satellite communications transmitters capable of handling large amounts of data.
In addition, due to a new high-output, high-efficiency GaN HEMT, Mitsubishi Electric’s new chips are claimed to achieve unsurpassed miniaturization and increased power-added efficiency (PAE) of more than 20% at maximum linear power.
By adding more Ka-band products to its lineup, Mitsubishi Electric expects to meet the growing demand for high-capacity communications and to contribute to smaller and more power-efficient satellite communications earth stations.
Picture: Example of final-stage circuitry of transmitters for Ka-band satellite communications earth station.
The new products are being exhibited at the IEEE MTT-S International Microwave Symposium (IMS) 2024 in Washington DC, USA (18–20 June).
Mitsubishi Electric sampling 16W GaN power amplifier module for 5G massive MIMO base stations
Mitsubishi Electric SiC power MOSFET
www.ims-ieee.org/about-ims/past-and-future-ims
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- Source: https://www.semiconductor-today.com/news_items/2024/jun/mitsubishi-electric-140624.shtml