Liu, C. et al. 2D materials-based static random-access memory. Adv. Mater. 34, 2107894 (2022).
Wan, Y. et al. Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth. Chem. Soc. Rev. 51, 803–811 (2022).
Chubarov, M. et al. Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire. ACS Nano 15, 2532–2541 (2021).
Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201–1207 (2021).
Vlassiouk, I. V. et al. Evolutionary selection growth of two-dimensional materials on polycrystalline substrates. Nat. Mater. 17, 318–322 (2018).
Zhang, B. Y. et al. Hexagonal metal oxide monolayers derived from the metal–gas interface. Nat. Mater. 20, 1073–1078 (2021).
Tusche, C., Meyerheim, H. L. & Kirschner, J. Observation of depolarized ZnO(0001) monolayers: formation of unreconstructed planar sheets. Phys. Rev. Lett. 99, 026102 (2007).
Dong, J., Zhang, L., Dai, X. & Ding, F. The epitaxy of 2D materials growth. Nat. Commun. 11, 5862 (2020).
Devulapalli, V., Bishara, H., Ghidelli, M., Dehm, G. & Liebscher, C. H. Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films. Appl. Surf. Sci. 562, 150194 (2021).
Chen, T.-A. et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219–223 (2020).
Wang, L. et al. Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature 570, 91–95 (2019).
Yang, P. et al. Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au(111). ACS Nano 14, 5036–5045 (2020).
Dumcenco, D. et al. Large-area epitaxial monolayer MoS2. ACS Nano 9, 4611–4620 (2015).
Yu, H. et al. Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films. ACS Nano 11, 12001–12007 (2017).
Aljarb, A. et al. Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides. ACS Nano 11, 9215–9222 (2017).
Suenaga, K. et al. Surface-mediated aligned growth of monolayer MoS2 and in-plane heterostructures with graphene on sapphire. ACS Nano 12, 10032–10044 (2018).
Zhang, X. et al. Diffusion-controlled epitaxy of large area coalesced WSe2 monolayers on sapphire. Nano Lett. 18, 1049–1056 (2018).
Wang, Q. et al. Wafer-scale highly oriented monolayer MoS2 with large domain sizes. Nano Lett. 20, 7193–7199 (2020).
Toofan, J. & Watson, P. R. The termination of the α-Al2O3 (0001) surface: a LEED crystallography determination. Surf. Sci. 401, 162–172 (1998).
Chiang, Y.-M., Birnie, D. P. & Kingery, W. D. Physical Ceramics: Principles for Ceramic Science and Engineering (John Wiley & Sons, 1997).
Ji, Q. et al. Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire. Nano Lett. 15, 198–205 (2015).
Yoshimoto, M. et al. Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication. Appl. Phys. Lett. 67, 2615–2617 (1995).
Pham Van, L., Kurnosikov, O. & Cousty, J. Evolution of steps on vicinal (0001) surfaces of α-alumina. Surf. Sci. 411, 263–271 (1998).
Thune, E., Fakih, A., Matringe, C., Babonneau, D. & Guinebretière, R. Understanding of one dimensional ordering mechanisms at the (001) sapphire vicinal surface. J. Appl. Phys. 121, 015301 (2017).
Koma, A. Van der Waals epitaxy for highly lattice-mismatched systems. J. Cryst. Growth 201–202, 236–241 (1999).
Lin, Y.-C. et al. Realizing large-scale, electronic-grade two-dimensional semiconductors. ACS Nano 12, 965–975 (2018).
Shi, Y. et al. Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics. ACS Nano 15, 9482–9494 (2021).
Chen, L. et al. Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode. ACS Nano 9, 8368–8375 (2015).
Fang, F. et al. Two-dimensional Cs2AgBiBr6/WS2 heterostructure-based photodetector with boosted detectivity via interfacial engineering. ACS Nano 16, 3985–3993 (2022).
Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).
Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).
Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 132, 154104 (2010).
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