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Tag: MOSFETs

Startup Funding: December 2022

The month of December saw six rounds of $100 million or more. The largest, at a massive half-billion dollars, will support manufacturing of 12-inch...

Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes

News: Microelectronics 9 December 2022 At the 68th annual IEEE International Electron Devices Meeting (IEDM 2022) in San Francisco (3–7 December), Japan-based Toshiba Electronic...

Radiation-Tolerant Power Electronic Systems are Hard to Design

Electronic systems in space are exposed to many hazards. Among other things, without the Earth’s protective magnetic field deflecting particles and our atmospheric blanket...

ROHM and BASiC partner on silicon carbide power devices for automotive applications

News: Microelectronics 1 December 2022 In a signing ceremony at its headquarters in Kyoto, Japan-based power semiconductor device maker ROHM Co Ltd has entered...

ROHM, Mazda and Imasen to co-develop inverters for e-Axle using SiC power modules

News: Microelectronics 22 November 2022 Japan’s ROHM has signed a joint development agreement with Mazda MotorCorp and Imasen Electric Industrial Co Ltd for inverters...

Hunan Sanan secures $524m SiC chip order for NEV power systems

News: Microelectronics 21 November 2022 China’s Sanan Optoelectronics Co Ltd says that its subsidiary Hunan Sanan has signed a procurement letter of intent (LOI)...

Balancing Analog Layout Parasitics in MOSFET Differential Pairs

This article is an abstract of Paul Clewes’ webinar you can find here. Differential amplifiers apply gain not to one input signal but to the...

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors

A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The...

UT Dallas: Electronic, Thermodynamic & Dielectric Properties of Two Novel vdW Materials

New technical paper titled “A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2,” from University of Texas at...

NBTI & PBTI of MOSFETs

Technical paper titled “Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction” from researchers at Liverpool John Moores University. Abstract“CMOS technology dominates the semiconductor...

Driving Toward More Rugged, Less Expensive SiC

Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it’s still too expensive for many applications. The reasons are...

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