Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).Article CAS Google Scholar Jung, S.-G., Kim, J.-K. &...
News: Microelectronics 31 August 2023 Japan-based power semiconductor maker ROHM Co Ltd has developed the BM3G0xxMUV-LB series of EcoGaN power-stage ICs with built-in 650V...
News: Microelectronics 27 June 2023 Power semiconductor product supplier Diodes Inc of Plano, TX, USA has further enhanced its wide-bandgap product range by releasing...
A technical paper titled “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing” was published by researchers at the Indian Institute of...
News: Microelectronics 13 June 2023 Infineon Technologies AG of Munich, Germany has made available its new generation of 1200V CoolSiC MOSFETs in TO263-7 packaging...
News: Microelectronics 8 June 2023 During the 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023) in Hong Kong (28 May–1 June),...
News: Microelectronics 5 June 2023 Micro/nanotechnology R&D center CEA-Leti of Grenoble, France has demonstrated that electrons and other charge carriers can move faster in...
News: Microelectronics 25 May 2023 Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA says that...
News: Microelectronics 9 May 2023 Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA has expanded...
News: Microelectronics 8 May 2023 To meet global climate targets, transportation must shift to more environmentally friendly vehicles such as energy-efficient electrified trains. However,...
MOSFET gate resistance is a very important parameter, determining many characteristics of MOSFETs and CMOS circuits, such as:
• Switching speed• RC delay• Fmax –...
