New research paper titled “How to Report and Benchmark Emerging Field-Effect Transistors” was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking...
Samsung announced initial production of its 3nm process node, which it calls Multi-Bridge-Channel FET (MBCFET). The first-generation 3nm process can reduce power consumption by...
At the VLSI Technology Symposium Imec presented on Buried Power Rails (BPR) and Backside Power Delivery (BSPD) in a paper entitled: “Scaled FinFETs Connected...
Beverly Hills gets a first, a Faraday Future Flagship Brand Experience Center. Sysco plans to purchase 800 battery electric Freightliner eCascadias. For those and...