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This article is the second part of our previous story, We May Soon Have Global Digital Identities. Although you can skip reading part one, we recommend checking it out before continuing! As we discussed in the first part, the United Kingdom is in the initial phases of its digital ID systems. Besides the UK, we also […]

Side-wall MoS₂ transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode

The post Vertical MoS₂ transistors with sub-1-nm gate lengths appeared first on Semiconductor Engineering.