News: Optoelectronics
27 March 2024
Pushing ahead with the European Union (EU)-funded photonixFAB initiative, the consortium partners have taken the first step...
News: Optoelectronics 15 June 2023 Analog/digital (mixed-signal) integrated circuit, micro-electro-mechanical system (MEMS) and specialty semiconductor foundry X-FAB Silicon Foundries SE of Tessenderlo, Belgium is...
A 14-year-old East Pattaya boy was committed to a hospital for a week for mandatory drug rehabilitation after getting hooked on marijuana and kratom...
Mobile World Congress (MWC) is the world’s largest gathering of mobile industry innovators where one can hear the latest on advanced technologies and solutions....
New markets require new approaches and tactics. More than 250 experts and industry leaders will take the stage at Inman Connect New York in January to...
Home > Press > HKUST researchers develop a novel integration scheme for efficient coupling between III-V and silicon
High-performance Si-waveguide coupled III-V photodetectors...
New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University.
Abstract:In this study,...
New research paper titled “Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides” by researchers at Tampere...
Engineered substrate manufacturer Soitec has announced a new fabrication facility at its headquarters in Bernin, near Grenoble, France, primarily to manufacture new silicon carbide (SiC) wafers targeted at the electric vehicle (EV) and industrial markets. The extension will also support Soitec’s 300mm silicon-on-insulator (SOI) activities...