News: Microelectronics
5 February 2024
Infineon Technologies AG of Munich, Germany says that its new CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching...
A technical paper titled “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing” was published by researchers at the Indian Institute of...
News: Microelectronics 8 June 2023 During the 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023) in Hong Kong (28 May–1 June),...
Industry Research Schottky barrier transistor; HW-accelerated RTL simulation; RISC-V microcontroller; GaN power devices; charging infrastructure and grid integration for electromobility; IFA...
News: Microelectronics 31 March 2023 Power semiconductor product supplier Diodes Inc of Plano, TX, USA has added to its portfolio of silicon carbide (SiC)...
A new technical paper titled “WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study” was published by researchers at National...
Quantum computing had a good month in January, collectively raising over $240 million. A significant chunk of that went to a full-stack quantum company...
News: Microelectronics 31 January 2023 Power semiconductor product supplier Diodes Inc of Plano, TX, USA has released its first silicon carbide (SiC) Schottky barrier diodes (SBD). The...
News: Microelectronics 9 December 2022 At the 68th annual IEEE International Electron Devices Meeting (IEDM 2022) in San Francisco (3–7 December), Japan-based Toshiba Electronic...
A new research paper titled “Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping” was published by researchers at NIST,...
