Dec 11, 2022
(Nanowerk News) Researchers at Tohoku University, the University of Messina, and the University of California, Santa Barbara (UCSB) have developed a...
This website uses cookies to improve your experience while you navigate through the website. The cookies that are categorized as necessary are stored on...
A new technical paper titled “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure” was published by researchers at Purdue University and...
This website uses cookies to improve your experience while you navigate through the website. The cookies that are categorized as necessary are stored on...
New research paper titled “How to Report and Benchmark Emerging Field-Effect Transistors” was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking...
This website uses cookies to improve your experience while you navigate through the website. The cookies that are categorized as necessary are stored on...
Samsung announced initial production of its 3nm process node, which it calls Multi-Bridge-Channel FET (MBCFET). The first-generation 3nm process can reduce power consumption by...
New technical paper titled “Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices” from researchers at Purdue University.
Abstract“The capability of emulating neural functionalities...
