Tag: metal–oxide–semiconductor

A*STAR and centrotherm partner on 200mm silicon carbide technology

Semiconductor December 15, 2023

News: Microelectronics 15 December 2023 A partnership has been announced that combines the 200mm open R&D silicon carbide (SiC) pilot line of...

Shared control of a 16 semiconductor quantum dot crossbar array – Nature Nanotechnology

Nano Technology August 27, 2023

3D-BRICKS: using DNA to create a new family of 3-dimensional nanotransistors

Nano Technology August 24, 2023

Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces

Nano Technology March 20, 2023

Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes

SemiconductorDecember 9, 2022

News: Microelectronics 9 December 2022 At the 68th annual IEEE International Electron Devices Meeting (IEDM 2022) in San Francisco (3–7 December), Japan-based Toshiba Electronic...

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors

SemiconductorAugust 24, 2022

A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The...

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