News: Microelectronics
21 February 2024
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced that its GaNFast power ICs drive Samsung’s 25W ‘Super-Fast Charging’ (SFC) for the new, AI-enhanced Galaxy S24 smartphone.
Flagship hardware specifications include a 2340 x 1080 (FHD+) dynamic AMOLED 2X, and 120Hz screen, plus the Galaxy S24 delivers innovative and practical AI features. Galaxy AI features like Live Translate, Chat Assist and new ‘Circle to Search’ with Google.
The 25W GaNFast unit delivers 50% charge to the high-capacity 4000mAh battery in only 30 minutes, while the USB PD 3.0 (Type-C) specification makes it compatible with other Samsung products including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Designed with sustainability in mind, the 25W power adapter features a 75% reduction in power consumption sleep mode. Navitas’ GaNFast technology is deployed in a high-frequency, quasi-resonant (HFQR) topology running at 150kHz — 3x faster than standard silicon designs — and delivers a 30% size shrink versus conventional charger designs.
“Deploying GaNFast ICs has allowed Samsung to create an ultra-compact, lightweight and efficient 25W adapter that can rapidly re-charge the new Galaxy S24 and a variety of other phones and accessories in the Samsung range,” notes David Carroll, senior VP worldwide sales for Navitas.
Navitas’ GaNFast 25W fast charger adopted for Samsung’s flagship Galaxy S23 phone
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- Source: https://www.semiconductor-today.com/news_items/2024/feb/navitas-210224.shtml
