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Ampleon showcasing new products at IMS

Date:

20 June 2022

At the IEEE International Microwave Symposium (IMS2022) at the Colorado Convention Center in Denver, CO, USA, Ampleon Netherlands B.V. of Nijmegen, The Netherlands is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace & defense, non-cellular communications (NCC), industrial, scientific & medical (ISM), cooking and defrosting applications.

Visitors to booth #8068 (Hall A-C) can see selected key products from the wireless infrastructure portfolio including GaN and LDMOS RF power solutions for 4G and 5G base-station applications. Also on show is Ampleon’s highly efficient small-cell power amplifier portfolio that enables high output powers in footprint-compatible packages.

Visitors can also see a variety of integrated massive MIMO RF solutions, suitable for use in all 5G frequency bands for 64T and 32T systems. The best-in-class RF power amplifiers for high-power macro base stations with LDMOS Doherty drivers and GaN final-stage devices for a wide range of output powers. The integrated LDMOS Doherty drivers (including the B11G2327N70D and B11G3338N80D) have the carrier, peaking device, input splitter, output combiner and pre-match all in a compact PQFN package. The C4H10P600A is a 600W GaN packaged asymmetric Doherty power transistor for base-station applications at frequencies from 700MHz to 1GHz.

Ampleon’s booth is also showcasing the latest RF power amplifiers from the industrial, medical, aerospace and broadband domains including new next-generation GaN amplifiers for broadband L- and S-band applications and an exclusive preview of rugged GaN amplifiers that have been pre-matched for industrial applications at 915MHz and 2.4GHz.

Also on show are what are claimed to be the industry’s most rugged 50V and 65V LDMOS amplifiers suitable for RF power generators that are required to operate in the harshest possible environments. In addition, suited to tough conditions is a range of all-in-one RF generators based on the ART150PEG. These RF power generators are tailored for defrosting applications at 40.68MHz or for use in wireless charging at 6.78MHz.

Also, senior team members are present technical papers at IMS. On 21 June at 3:10pm (Interactive Forum Area, room 2A-2B) Ammar Issaoun is talking about a ‘GaN characterization method towards linearizability prediction’. On 23 June at 2.40pm (room 501-502) Fred van Rijs is presenting ‘A 39W Fully Digital Wideband Inverted Doherty Transmitter’.

Tags: GaN RF

Visit: www.ims-ieee.org

Visit: www.ampleon.com

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  • Source: http://www.semiconductor-today.com/news_items/2022/jun/ampleon-200622.shtml

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