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A new technical paper titled “RISC-Vlim, a RISC-V Framework for Logic-in-Memory Architectures” was published by researchers at Politecnico di Torino (Italy), Univerity of Tor...
Demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues. NAND and NOR LIM composed of silicon nanowire (SiNW) feedback field-effect transistors (FBFETs) to verify universal gate functions, where the configuration of the SiNW FBFETs maintains conventional CMOS logic gates