Samsung Electronics took center stage at the Samsung AI Forum 2023, hosted at the Samsung R&D campus in Seoul, Korea, showcasing groundbreaking advancements in...
In the world of science, one of the most sought-after materials has been the elusive ambient-pressure superconductor that operates at room temperature. Such a...
A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.
Abstract“In...
Dec 22, 2022
(Nanowerk News) Molecular chirality means the geometrical property of molecules with broken mirror symmetry. Characterizing molecular chirality and understanding their roles...
A new technical paper titled “Achieving the Performance of All-Bank In-DRAM PIM With Standard Memory Interface: Memory-Computation Decoupling” was published by researchers at ...
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New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University.
Abstract:In this study,...
New technical paper titled “Efficient ECU Analysis Technology Through Structure-Aware CAN Fuzzing” from researchers at Soongsil University, Korea University, and Hansung University with funding...
Demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues. NAND and NOR LIM composed of silicon nanowire (SiNW) feedback field-effect transistors (FBFETs) to verify universal gate functions, where the configuration of the SiNW FBFETs maintains conventional CMOS logic gates