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Tag: Korea University

Samsung’s Visionary Leap into the Future of AI and Chip Technology

Samsung Electronics took center stage at the Samsung AI Forum 2023, hosted at the Samsung R&D campus in Seoul, Korea, showcasing groundbreaking advancements in...

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The future that was once a dream may now be much closer

In the world of science, one of the most sought-after materials has been the elusive ambient-pressure superconductor that operates at room temperature. Such a...

Nifty nanoparticles help ‘peel back the curtain’ into the world of super small things

Nifty nanoparticles help 'peel back the curtain' into the world of super small things by Staff Writers Canberra, Australia (SPX) May 01, 2023 ...

Ternary LIM Operation of the TNAND and TNOR Universal Gates Using DG Feedback FETs

A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University. Abstract“In...

Collective circular dichroism by chiral plasmonic nanoparticles

Dec 22, 2022 (Nanowerk News) Molecular chirality means the geometrical property of molecules with broken mirror symmetry. Characterizing molecular chirality and understanding their roles...

Memory-Computation Decoupling Execution To Achieve Ideal All-Bank PIM Performance

A new technical paper titled “Achieving the Performance of All-Bank In-DRAM PIM With Standard Memory Interface: Memory-Computation Decoupling” was published by researchers at ...

Technical Paper Roundup: Aug. 30

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Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)

New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. Abstract:In this study,...

Addressing Vehicle Security Vulnerabilities With Structure-Aware CAN Fuzzing System

New technical paper titled “Efficient ECU Analysis Technology Through Structure-Aware CAN Fuzzing” from researchers at Soongsil University, Korea University, and Hansung University with funding...

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

Demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues. NAND and NOR LIM composed of silicon nanowire (SiNW) feedback field-effect transistors (FBFETs) to verify universal gate functions, where the configuration of the SiNW FBFETs maintains conventional CMOS logic gates

The post NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors appeared first on Semiconductor Engineering.

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