The fill factor (FF) of the certified cells breached the threshold of 86%, reaching 86.59% and achieving the world’s highest level for silicon cells. A new process developed by LONGi’s R&D team can effectively reduce the contact resistance of the interface, so as to improve the FF and increase a cell’s current density. The current density presently reaches 40.49mA/cm² on an M6 9BB cell.

Compared with the HJT solar cells on which June’s conversion efficiency of 25.26% was achieved, the cells for the latest two world records were optimized. The microcrystalline N window layer was optimized to further increase current density, with a new intrinsic layer structure developed to enhance passivation performance and increase the Voc up to 2mV. The LONGi team also applied a completely indium-free TCO process. The cell was certified by ISFH with an efficiency of more than 25%, providing a valuable reference path for cost reduction in HJT industrialization.

From 25.26% through 25.82% to the latest 26.30%, LONGi has now achieved the rare feat of setting HJT cell efficiency world records three times in six months. Additionally, its N-type and P-Type TOPCon cells have also achieved the world’s highest conversion efficiency of 25.21% and 25.19% respectively.

SOURCE LONGi Solar