WILMINGTON, Mass. (PRWEB) June 29, 2020
Heilind Electronics, a leading global distributor of electronic components and authorized distributor for E-Switch, has expanded its ULV anti-vandal switch series with three prewired options.
ULV series anti-vandal switches are designed for applications that are subjected to harsh use. These durable and robust push-button switches feature 19 mm (ULV4 series), 22 mm (ULV7 series), and 25 mm (ULV8 series) panel cutouts and multiple switch functions. The switch design offers tamper resistance and anti-jamming properties. In addition, the IP67-rated and UL-certified ULV series provides a long operating life of up to 1 million (momentary) and 500,000 (latching) cycles.
All ULV models feature a ring lens style, along with a variety of body and actuator finishes. The models also offer an array of LED color options, including bi-color choices and multiple illumination voltages.
Applications for anti-vandal and tamper-proof switches include audio-visual and security devices, industrial controls, marine and watercraft equipment, ticket kiosks, electrical appliances and medical equipment.
Visit Heilind’s website for more information about E-Switch Anti-Vandal Switches.
About Heilind Electronics
Heilind Electronics, Inc. (http://www.heilind.com) is one of the world’s leading distributors of connectors, relays, sensors, switches, thermal management and circuit protection products, terminal blocks, wire and cable, wiring accessories and insulation and identification products. Founded in 1974, Heilind has locations throughout the U.S., Canada, Mexico, Brazil, Germany, Singapore, Hong Kong and China. Follow Heilind on Facebook at facebook.com/Heilind and on Twitter at twitter.com/Heilind.
E-Switch has been delivering quality electromechanical switches to the telecom, high tech, medical, electronics, instrumentation, industrial, audio/visual, appliance and consumer markets since 1979. Products include tact, anti-vandal, pushbutton, rocker, toggle, slide, DIP, rotary, keylock, snap action, power and illuminated switches.
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Mitsubishi Electric unveils SiC MOSFET circuit simulation model
9 July 2020
On 8 July, at the online International Conference on Power Conversion and Intelligent Motion (PCIM Europe 2020), Tokyo-based Mitsubishi Electric Corp presented a new, highly accurate SPICE (Simulation Program with Integrated Circuit Emphasis) model for analyzing the electronic circuitry of discrete power semiconductors (T. Masuhara, T. Horiguchi, Y. Mukunoki, T. Terashima, N. Hanano and E. Suekawa, ‘Development of an Accurate SPICE Model for a New 1.2-kV SiC-MOSFET Device’). The technology is deployed in the N-series 1200V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), samples of which begin shipping in July.
The firm says the model simulates high-speed-switching waveforms almost as well as actual measurements, on a level of accuracy currently believed to be unmatched in the industry, which is expected to lead to more efficient circuit designs for power converters.
Going forward, Mitsubishi Electric expects to add several temperature-dependent parameters to enable its SPICE model to work at high temperature.
SweGaN expands to larger HQ
9 July 2020
SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for for telecom, satellite, defense and power applications, has relocated its corporate headquarters to a new facility in Linköping that combines a lab housing several production tools and an administration and office area. Concurrently, SweGaN has added 150mm (6-inch) QuanFINE GaN-on-SiC epiwafers to its product portfolio for and high-power switching devices.
The new HQ is just 200m from Linköping University and 10km from Linköping’s international airport, enabling easy access for visits by customers and partners. Constructed with meter-thick concrete walls and formerly used by the Swedish Défense Research Agency (FOI), the new facility was opened in first-quarter 2020.
“The facility is a huge contrast from our previous cramped quarters” says CEO Olof Kordina. “The lab area has incredibly robust 1m-thick walls… [it] houses SweGaN’s main operational offices and a lab for production and R&D,” he adds.
Also, responding to significant customer demand for larger QuanFINE products, SweGaN has developed the 150mm epi growth process and delivered the new 150mm QuanFINE epiwafers to customers, starting already in Q1/2020. The 150mm epiwafers will boost the manufacturing capacity of GaN-on-SiC RF devices for various applications. “The new QuanFINE 150mm epiwafers are mass-produced in our new high-capacity reactor,” notes Kordina.
“Our new product signals that SweGaN is aligning its production capacity and capability closely with our customers’ needs for the rapidly expanding 5G networks, defense radars and satellite communication,” states chief technology officer Jr-Tai Chen. “The 150mm QuanFINE product will also facilitate the development of high-end GaN power devices, where price–performance ratio and reliability are critical elements for our customers.”
Highlighting that device manufacturers typically execute over 100 steps during the fabrication of a device, a larger epiwafer – in simple terms – means that manufacturers can produce more devices in the same cycle time, creating clear benefits for return-on-investment.
SweGaN claims that the unique, simplified QuanFINE heterostructure provides superior electrical and thermal properties, including low current dispersion, excellent heat dissipation and high breakdown performance, to ensure the best long-term return-on-investment for customer product development for RF and power applications.
GaN-on-Si firm ALLOS sells high-power electronics and RF business to AZUR
9 July 2020
Azur Space Solar Power GmbH of Heilbronn, Germany has acquired the electronics business of IP licensing & technology engineering firm ALLOS Semiconductors GmbH of Dresden, Germany. AZUR SPACE will use the acquired technology to expand its III-V epitaxy business into the booming market for gallium nitride on silicon (GaN-on-Si) high-power electronics and RF epiwafers. ALLOS will continue its optoelectronics business, focusing on the emerging micro-LED display market.
Azur Space’s entry into supplying III-V-epiwafers to the high-power electronics (HPE) market follows several years of working in stealth mode through preparation and investment. Beyond the supply of GaN-on-Si epiwafers, the firm is also engaged in gallium arsenide (GaAs) for the HPE market. “We are the leading provider of high-efficiency multi-junction space solar cells based on III-V epitaxy, with a capacity of 500,000 wafers/year and with multiple MOCVD reactors running 24/7,” says Azur’s CEO Juergen Heizmann. “Our skills and know-how are a perfect match to the requirements of the quickly emerging III-V HPE epiwafer market,” he reckons.
Through investment of over €10m and leveraging its III-V manufacturing expertise and facilities, Azur aims to grow HPE into a second business line. A driving force behind its decision to enter the HPE epiwafer market is the strongly growth in demand for energy-efficient power systems in electric or hybrid vehicles (EV/HEVs), all kinds of charging solutions, renewable energy, server farms, electric motors and many other HPE applications. “With ever increasing electrification and novel applications, the HPE market continues to grow – and the climate challenge is increasing the need for energy efficiency,” says Heizmann “With the two inherently high-efficient III-V technologies GaAs and GaN-on-Si, Azur is addressing the huge demand to contribute to the energy revolution, replacing less efficient technologies.”
Since its formation, ALLOS developed its GaN-on-Si epi technology for both high-power electronics and micro-LED applications. “We attained leading positions in two very attractive markets. However, customers’ required technologies and business models are different in both markets,” notes ALLOS’ co-founder & CEO Burkhard Slischka. “Due to its skills and resources, Azur Space is the right company to bring the technology into mass production and to serve a global customer base,” he adds. “Thanks to the booming demand for GaN-on-Si HPE epiwafers, the timing is right as well and, through the deal, we will participate in the long-term market success.”
With the transaction, ALLOS has ceased to service the high-power electronics and RF markets but retains the technology and rights for the optoelectronics market. In the latter, ALLOS sees its 200mm and 300mm epiwafer technology as being crucial in meeting the uniformity, crystal quality and manufacturability requirements for novel micro-LED display applications. “We can now fully focus on the rapidly evolving micro-LED market, where our technology provides huge yield and cost advantages throughout the entire value chain and where we have direct access to the companies driving the development,” says Slischka.
Azur and ALLOS will complete the transfer of the HPE and RF business and technology by the end of September. In advance of the start of manufacturing, Azur is already open to customer enquiries.
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